堆叠纳米线MOS晶体管制作方法 | |
殷华湘![]() ![]() | |
2018-02-13 | |
著作权人 | 中国科学院微电子研究所 |
专利号 | US9892912 |
国家 | 美国 |
文献子类 | 发明专利 |
英文摘要 | Methods of manufacturing stacked nanowires MOS transistors are disclosed. In one aspect, the method includes forming a plurality of fins along a first direction on a substrate. The method also includes forming stack of nanowires constituted of a plurality of nanowires in each of the fins. The method also includes forming a gate stack along a second direction in the stack of nanowires, the gate stack surrounding the stack of nanowires. The method also includes forming source/drain regions at both sides of the gate stack, the nanowires between the respective source/drain regions constituting a channel region. A stack of nanowires may be formed by a plurality of etching back, laterally etching a trench and filling the trench. The laterally etching process includes isotropic dry etching having an internally tangent and lateral etching, and a wet etching which selectively etches along respective crystallographic directions. |
公开日期 | 2015-08-13 |
申请日期 | 2013-08-06 |
语种 | 中文 |
内容类型 | 专利 |
源URL | [http://159.226.55.107/handle/172511/18887] ![]() |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | 殷华湘,秦长亮,付作振,等. 堆叠纳米线MOS晶体管制作方法. US9892912. 2018-02-13. |
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