Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure

	Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure
	Gu J(顾杰); Hou CZ(侯朝昭); Zhang QZ(张青竹); Yin HX(殷华湘); Xiang JJ(项金娟); Qin ZL(秦长亮); Yao JX(姚佳欣)
刊名	ECS Journal of Solid State Science and Technology
	2017-11-08
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/18111]
专题	微电子研究所_集成电路先导工艺研发中心
推荐引用方式 GB/T 7714	Gu J,Hou CZ,Zhang QZ,et al. Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure[J]. ECS Journal of Solid State Science and Technology,2017.
APA	顾杰.,侯朝昭.,张青竹.,殷华湘.,项金娟.,...&姚佳欣.(2017).Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure.ECS Journal of Solid State Science and Technology.
MLA	顾杰,et al."Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure".ECS Journal of Solid State Science and Technology (2017).