Investigation on direct-gap GeSn alloys for high-performance tunneling field-effect transistor applications | |
Liu L(刘磊); Wang GL(王桂磊); Henry Homayoun Radamson | |
刊名 | Electron Devices Technology and Manufacturing Conference
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2017-02-28 | |
文献子类 | 期刊论文 |
内容类型 | 期刊论文 |
源URL | [http://159.226.55.106/handle/172511/18103] ![]() |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
推荐引用方式 GB/T 7714 | Liu L,Wang GL,Henry Homayoun Radamson. Investigation on direct-gap GeSn alloys for high-performance tunneling field-effect transistor applications[J]. Electron Devices Technology and Manufacturing Conference,2017. |
APA | 刘磊,王桂磊,&Henry Homayoun Radamson.(2017).Investigation on direct-gap GeSn alloys for high-performance tunneling field-effect transistor applications.Electron Devices Technology and Manufacturing Conference. |
MLA | 刘磊,et al."Investigation on direct-gap GeSn alloys for high-performance tunneling field-effect transistor applications".Electron Devices Technology and Manufacturing Conference (2017). |
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