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	Investigation on direct-gap GeSn alloys for high-performance tunneling field-effect transistor applications
	Liu L(刘磊); Wang GL(王桂磊); Henry Homayoun Radamson
刊名	Electron Devices Technology and Manufacturing Conference
	2017-02-28
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/18103]
专题	微电子研究所_集成电路先导工艺研发中心
推荐引用方式 GB/T 7714	Liu L,Wang GL,Henry Homayoun Radamson. Investigation on direct-gap GeSn alloys for high-performance tunneling field-effect transistor applications[J]. Electron Devices Technology and Manufacturing Conference,2017.
APA	刘磊,王桂磊,&Henry Homayoun Radamson.(2017).Investigation on direct-gap GeSn alloys for high-performance tunneling field-effect transistor applications.Electron Devices Technology and Manufacturing Conference.
MLA	刘磊,et al."Investigation on direct-gap GeSn alloys for high-performance tunneling field-effect transistor applications".Electron Devices Technology and Manufacturing Conference (2017).

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