Necessity of resist model in source mask optimization for negative tone development process

	Necessity of resist model in source mask optimization for negative tone development process
	Wei YY(韦亚一); Dong LS(董立松); Zhao LJ(赵利俊); Chen WH(陈文辉); Ye TC(叶甜春)
刊名	J. Micro/Nanolith. MEMS MOEMS
	2017-09-13
文献子类	期刊论文
语种	英语
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/18090]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Wei YY,Dong LS,Zhao LJ,et al. Necessity of resist model in source mask optimization for negative tone development process[J]. J. Micro/Nanolith. MEMS MOEMS,2017.
APA	Wei YY,Dong LS,Zhao LJ,Chen WH,&Ye TC.(2017).Necessity of resist model in source mask optimization for negative tone development process.J. Micro/Nanolith. MEMS MOEMS.
MLA	Wei YY,et al."Necessity of resist model in source mask optimization for negative tone development process".J. Micro/Nanolith. MEMS MOEMS (2017).