一种半导体结构及其制造方法 | |
殷华湘![]() ![]() | |
2016-03-01 | |
著作权人 | 中国科学院微电子研究所 |
专利号 | US9276085 |
国家 | 美国 |
文献子类 | 发明专利 |
英文摘要 | The present invention provides a semiconductor structure comprising a substrate; a gate stack on the substrate; a spacer on the sidewalls of the gate stack; a source/drain junction extension formed in the substrate on both sides of the gate stack by epitaxial growth; and a source/drain region in the substrate on both sides of the source/drain junction extension. Accordingly, the present invention also provides methods for manufacturing the semiconductor structure. The present invention can provide a source/drain junction extension with a high doping concentration and a low junction depth, thereby effectively improving the performance of the semiconductor structure. |
公开日期 | 2013-09-26 |
申请日期 | 2012-04-26 |
语种 | 中文 |
内容类型 | 专利 |
源URL | [http://159.226.55.106/handle/172511/16689] ![]() |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | 殷华湘,马小龙,秦长亮,等. 一种半导体结构及其制造方法. US9276085. 2016-03-01. |
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