半导体器件制造方法 | |
李春龙; 李俊峰; 闫江; 孟令款; 贺晓彬; 陈广璐; 赵超 | |
2016-03-03 | |
著作权人 | 中国科学院微电子研究所 |
专利号 | US9331172 |
国家 | 美国 |
文献子类 | 发明专利 |
英文摘要 | A method for manufacturing a dummy gate structure. The method may include: forming a dummy gate oxide layer and a dummy gate material layer on a semiconductor substrate sequentially; forming an ONO structure on the dummy gate material layer; forming a top amorphous silicon layer on the ONO structure; forming a patterned photoresist layer on the top amorphous silicon layer; etching the top amorphous silicon layer with the patterned photoresist layer as a mask, the etching being stopped on the ONO structure; etching the ONO structure with the patterned photoresist layer and a remaining portion of the top amorphous silicon layer as a mask, the etching being stopped on the dummy gate material layer; removing the patterned photoresist layer; and etching the dummy gate material layer, the etching being stopped at the dummy gate oxide layer to form a dummy gate structure. |
公开日期 | 2014-03-20 |
申请日期 | 2012-11-13 |
语种 | 中文 |
内容类型 | 专利 |
源URL | [http://159.226.55.106/handle/172511/16622] |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | 李春龙,李俊峰,闫江,等. 半导体器件制造方法. US9331172. 2016-03-03. |
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