Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate

	Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate
	Wang XL(王晓磊); Xiang JJ(项金娟); Zhang YB(张严波); Li TT(李亭亭); Gao JF(高建峰); Yin HX(殷华湘); Li JF(李俊峰); Wang WW(王文武)
刊名	Solid-State Electronics
	2016-10-01
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/16213]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Wang XL,Xiang JJ,Zhang YB,et al. Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate[J]. Solid-State Electronics,2016.
APA	Wang XL.,Xiang JJ.,Zhang YB.,Li TT.,Gao JF.,...&Wang WW.(2016).Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate.Solid-State Electronics.
MLA	Wang XL,et al."Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate".Solid-State Electronics (2016).