Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate | |
Wang XL(王晓磊)![]() ![]() ![]() ![]() ![]() ![]() ![]() | |
刊名 | Solid-State Electronics
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2016-10-01 | |
文献子类 | 期刊论文 |
内容类型 | 期刊论文 |
源URL | [http://159.226.55.106/handle/172511/16213] ![]() |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | Wang XL,Xiang JJ,Zhang YB,et al. Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate[J]. Solid-State Electronics,2016. |
APA | Wang XL.,Xiang JJ.,Zhang YB.,Li TT.,Gao JF.,...&Wang WW.(2016).Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate.Solid-State Electronics. |
MLA | Wang XL,et al."Investigation of thermal atomic layer deposited TiAlX (X = N or C) film as metal gate".Solid-State Electronics (2016). |
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