Investigation of N type metal TiAlC by thermal atomic layer deposition using TiCl4 and TEA as precursors

	Investigation of N type metal TiAlC by thermal atomic layer deposition using TiCl4 and TEA as precursors
	Xiang JJ(项金娟); Li TT(李亭亭); Wang XL(王晓磊); Li JF(李俊峰)
刊名	ECS Journal of Solid State Science and Technology
	2016-05-01
文献子类	期刊论文
英文摘要	N type metal gate TiAlC film was grown by thermal atomic layer deposition (ALD) technique using titanium tetrachloride (TiCl4) and triethylaluminum (TEA) as precursors for the first time. The physical characteristics of the TiAlC film such as chemical composition, growth rate and crystal morphology were estimated by X-ray photoemission spectroscopy, X-ray reflectivity and X-ray diffraction, respectively.
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/16212]
专题	微电子研究所_集成电路先导工艺研发中心
推荐引用方式 GB/T 7714	Xiang JJ,Li TT,Wang XL,et al. Investigation of N type metal TiAlC by thermal atomic layer deposition using TiCl4 and TEA as precursors[J]. ECS Journal of Solid State Science and Technology,2016.
APA	项金娟,李亭亭,王晓磊,&李俊峰.(2016).Investigation of N type metal TiAlC by thermal atomic layer deposition using TiCl4 and TEA as precursors.ECS Journal of Solid State Science and Technology.
MLA	项金娟,et al."Investigation of N type metal TiAlC by thermal atomic layer deposition using TiCl4 and TEA as precursors".ECS Journal of Solid State Science and Technology (2016).