Understanding the role of TiN barrier layer on electrical performance of MOS device with ALD-TiN/ALD-TiAlC metal gate stacks

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	Understanding the role of TiN barrier layer on electrical performance of MOS device with ALD-TiN/ALD-TiAlC metal gate stacks
	Xiang JJ(项金娟); Li TT(李亭亭); Wang XL(王晓磊); Han K(韩锴); Li JF(李俊峰)
刊名	ECS Journal of Solid State Science and Technology
	2016-05-01
文献子类	期刊论文
英文摘要	The role of TiN barrier layer on electrical performance of metal oxide semiconductor (MOS) with Si/SiO2/HfO2/ALD-TiN/ALDTiAlC structure is investigated. It is found that the effective workfunction of TiN/TiAlC decreases with thinner TiN (in the range of 0～3 nm). This is attributed to the lower workfunction of thinner TiN. The gate leakage Jg of the MOS capacitor with TiN barrier is slightly higher than that without TiN, while the equivalent oxide thickness is smaller.
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/16211]
专题	微电子研究所_集成电路先导工艺研发中心
推荐引用方式 GB/T 7714	Xiang JJ,Li TT,Wang XL,et al. Understanding the role of TiN barrier layer on electrical performance of MOS device with ALD-TiN/ALD-TiAlC metal gate stacks[J]. ECS Journal of Solid State Science and Technology,2016.
APA	项金娟,李亭亭,王晓磊,韩锴,&李俊峰.(2016).Understanding the role of TiN barrier layer on electrical performance of MOS device with ALD-TiN/ALD-TiAlC metal gate stacks.ECS Journal of Solid State Science and Technology.
MLA	项金娟,et al."Understanding the role of TiN barrier layer on electrical performance of MOS device with ALD-TiN/ALD-TiAlC metal gate stacks".ECS Journal of Solid State Science and Technology (2016).