Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology

	Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology
	Wang GL(王桂磊); Qin ZL(秦长亮); Yin HX(殷华湘); Duan NY(段宁远); Yang T(杨涛); Li JF(李俊峰); Yan J(闫江); Zhu HL(朱慧珑)
刊名	Microelectronics Engineering
	2016-06-01
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/16195]
专题	微电子研究所_集成电路先导工艺研发中心
推荐引用方式 GB/T 7714	Wang GL,Qin ZL,Yin HX,et al. Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology[J]. Microelectronics Engineering,2016.
APA	王桂磊.,秦长亮.,殷华湘.,段宁远.,杨涛.,...&朱慧珑.(2016).Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology.Microelectronics Engineering.
MLA	王桂磊,et al."Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology".Microelectronics Engineering (2016).