一种后栅工艺假栅的制造方法和后栅工艺假栅 | |
李俊峰; 闫江; 赵超; 李春龙 | |
2015-08-18 | |
著作权人 | 中国科学院微电子研究所 |
专利号 | US9111863 |
国家 | 美国 |
文献子类 | 发明专利 |
英文摘要 | A method for manufacturing a dummy gate in a gate-last process and a dummy gate in a gate-last process are provided. The method includes: providing a semiconductor substrate; growing a gate oxide layer on the semiconductor substrate; depositing bottom-layer amorphous silicon on the gate oxide layer; depositing an ONO structured hard mask on the bottom-layer amorphous silicon; depositing top-layer amorphous silicon on the ONO structured hard mask; depositing a hard mask layer on the top-layer amorphous silicon, and trimming the hard mask layer so that the trimmed hard mask layer has a width less than or equal to 22 nm; and etching the top-layer amorphous silicon, the ONO structured hard mask and the bottom-layer amorphous silicon in accordance with the trimmed hard mask layer, and removing the hard mask layer and the top-layer amorphous silicon. |
公开日期 | 2014-06-12 |
申请日期 | 2012-12-12 |
语种 | 中文 |
内容类型 | 专利 |
源URL | [http://159.226.55.106/handle/172511/16052] |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | 李俊峰,闫江,赵超,等. 一种后栅工艺假栅的制造方法和后栅工艺假栅. US9111863. 2015-08-18. |
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