Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22nm node pMOSFETs

	Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22nm node pMOSFETs
	Li JF(李俊峰); Wang GL(王桂磊); Xu YF(徐烨峰); Luo J(罗军); Guo YL(郭奕栾); Qin ZL(秦长亮); Tang ZY(唐兆云); Yin HX(殷华湘); Yan J(闫江); Zhu HL(朱慧珑)
刊名	Solid-State Electronics
	2015-07-31
公开日期	2016-05-31
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/15065]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Li JF,Wang GL,Xu YF,et al. Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22nm node pMOSFETs[J]. Solid-State Electronics,2015.
APA	Li JF.,Wang GL.,Xu YF.,Luo J.,Guo YL.,...&Ye TC.(2015).Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22nm node pMOSFETs.Solid-State Electronics.
MLA	Li JF,et al."Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22nm node pMOSFETs".Solid-State Electronics (2015).