Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket

	Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket
	Chen DP(陈大鹏); Ye TC(叶甜春); Zhu HL(朱慧珑); Yin HX(殷华湘); Xu M(许淼); Zhong J(钟健); Li JF(李俊峰); Zhao C(赵超)
刊名	IEEE ELECTRON DEVICE LETTERS
	2015-05-18
公开日期	2016-05-31
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/15033]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Chen DP,Ye TC,Zhu HL,et al. Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket[J]. IEEE ELECTRON DEVICE LETTERS,2015.
APA	Chen DP.,Ye TC.,Zhu HL.,Yin HX.,Xu M.,...&Zhao C.(2015).Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket.IEEE ELECTRON DEVICE LETTERS.
MLA	Chen DP,et al."Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket".IEEE ELECTRON DEVICE LETTERS (2015).