半导体器件及其制造方法 | |
陈大鹏![]() ![]() | |
2014-02-18 | |
著作权人 | 中国科学院微电子研究所 |
专利号 | US8652893 |
国家 | 美国 |
文献子类 | 发明专利 |
英文摘要 | A semiconductor device and its manufacturing method, wherein the NMOS device is covered by a layer of silicon nitride film having a high ultraviolet light absorption coefficient through PECVD, said silicon nitride film can well absorb ultraviolet light when being subject to the stimulated laser surface anneal so as to achieve a good dehydrogenization effect, and after dehydrogenization, the silicon nitride film will have a high tensile stress; since the silicon nitride film has a high ultraviolet light absorption coefficient, there is no need to heat the substrate, thus avoiding the adverse influences to the device caused by heating the substrate to dehydrogenize, and maintaining the heat budget brought about by the PECVD process. |
公开日期 | 2013-04-04 |
申请日期 | 2011-11-25 |
语种 | 中文 |
内容类型 | 专利 |
源URL | [http://10.10.10.126/handle/311049/13198] ![]() |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | 陈大鹏,殷华湘,徐秋霞. 半导体器件及其制造方法. US8652893. 2014-02-18. |
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