Structure design and film process optimization for metal-gate stress in 20 nm nMOS devices

	Structure design and film process optimization for metal-gate stress in 20 nm nMOS devices
	Yin HX(殷华湘); Fu ZZ(付作振); Ma XL(马小龙)
刊名	Journal of Semiconductors
	2013-06-01
公开日期	2014-10-30
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/12074]
专题	微电子研究所_集成电路先导工艺研发中心
通讯作者	Yin HX(殷华湘)
推荐引用方式 GB/T 7714	Yin HX,Fu ZZ,Ma XL. Structure design and film process optimization for metal-gate stress in 20 nm nMOS devices[J]. Journal of Semiconductors,2013.
APA	殷华湘,付作振,&马小龙.(2013).Structure design and film process optimization for metal-gate stress in 20 nm nMOS devices.Journal of Semiconductors.
MLA	殷华湘,et al."Structure design and film process optimization for metal-gate stress in 20 nm nMOS devices".Journal of Semiconductors (2013).