Structure design and film process optimization for metal-gate stress in 20 nm nMOS devices | |
Yin HX(殷华湘); Fu ZZ(付作振); Ma XL(马小龙) | |
刊名 | Journal of Semiconductors
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2013-06-01 | |
公开日期 | 2014-10-30 |
内容类型 | 期刊论文 |
源URL | [http://10.10.10.126/handle/311049/12074] ![]() |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
通讯作者 | Yin HX(殷华湘) |
推荐引用方式 GB/T 7714 | Yin HX,Fu ZZ,Ma XL. Structure design and film process optimization for metal-gate stress in 20 nm nMOS devices[J]. Journal of Semiconductors,2013. |
APA | 殷华湘,付作振,&马小龙.(2013).Structure design and film process optimization for metal-gate stress in 20 nm nMOS devices.Journal of Semiconductors. |
MLA | 殷华湘,et al."Structure design and film process optimization for metal-gate stress in 20 nm nMOS devices".Journal of Semiconductors (2013). |
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