Proton Irradiation Effect on InP-Based High Electron Mobility Transistor by Numerical Simulation with Non-Uniform Induced Acceptor-Like Defects

	Proton Irradiation Effect on InP-Based High Electron Mobility Transistor by Numerical Simulation with Non-Uniform Induced Acceptor-Like Defects
	Jin Z(金智); Shuxiang Sun; Mingming Chang; Chao Zhang; Chao Cheng; Yuxiao Li; Yinghui Zhong; Ding P(丁芃); Zhichao Wei
刊名	PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
	2018-06-01
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/18995]
专题	微电子研究所_高频高压器件与集成研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Jin Z,Shuxiang Sun,Mingming Chang,et al. Proton Irradiation Effect on InP-Based High Electron Mobility Transistor by Numerical Simulation with Non-Uniform Induced Acceptor-Like Defects[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,2018.
APA	Jin Z.,Shuxiang Sun.,Mingming Chang.,Chao Zhang.,Chao Cheng.,...&Zhichao Wei.(2018).Proton Irradiation Effect on InP-Based High Electron Mobility Transistor by Numerical Simulation with Non-Uniform Induced Acceptor-Like Defects.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS.
MLA	Jin Z,et al."Proton Irradiation Effect on InP-Based High Electron Mobility Transistor by Numerical Simulation with Non-Uniform Induced Acceptor-Like Defects".PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2018).