High-Power X -Band 5-b GaN Phase Shifter With Monolithic Integrated E/D HEMTs Control Logic

	High-Power X -Band 5-b GaN Phase Shifter With Monolithic Integrated E/D HEMTs Control Logic
	Luo WJ(罗卫军); Liu XY(刘新宇); Sun PP(孙朋朋); Zhang ZJ(张宗敬); Liu H(刘辉)
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2017-07-06
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/18003]
专题	微电子研究所_高频高压器件与集成研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Luo WJ,Liu XY,Sun PP,et al. High-Power X -Band 5-b GaN Phase Shifter With Monolithic Integrated E/D HEMTs Control Logic[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2017.
APA	Luo WJ,Liu XY,Sun PP,Zhang ZJ,&Liu H.(2017).High-Power X -Band 5-b GaN Phase Shifter With Monolithic Integrated E/D HEMTs Control Logic.IEEE TRANSACTIONS ON ELECTRON DEVICES.
MLA	Luo WJ,et al."High-Power X -Band 5-b GaN Phase Shifter With Monolithic Integrated E/D HEMTs Control Logic".IEEE TRANSACTIONS ON ELECTRON DEVICES (2017).