Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs

	Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs
	Wang XH(王鑫华)
刊名	Journal of Vacuum Science & Technology B
	2016-03-23
文献子类	期刊论文
英文摘要	The interface between silicon nitride (SiNx) gate dielectric grown by low pressure chemical vapor deposition (LPCVD) and III-nitride heterostructure is investigated by a systematical comparison of AlGaN/GaN high-electron-mobility transistors(HEMTs) and metal-insulator-semiconductor HEMTs (MIS-HEMTs). A 20-nm LPCVD-SiNx grown at 650 °C features a high breakdownE-field of 13 MV/cm and a large conduction-band offset of 2.75 eV to GaN. High ON/OFF current ratio (～1010) as well as breakdown voltage
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/16131]
专题	微电子研究所_高频高压器件与集成研发中心
推荐引用方式 GB/T 7714	Wang XH. Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs[J]. Journal of Vacuum Science & Technology B,2016.
APA	王鑫华.(2016).Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs.Journal of Vacuum Science & Technology B.
MLA	王鑫华."Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs".Journal of Vacuum Science & Technology B (2016).