Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs | |
Wang XH(王鑫华) | |
刊名 | Journal of Vacuum Science & Technology B
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2016-03-23 | |
文献子类 | 期刊论文 |
英文摘要 | The interface between silicon nitride (SiNx) gate dielectric grown by low pressure chemical vapor deposition (LPCVD) and III-nitride heterostructure is investigated by a systematical comparison of AlGaN/GaN high-electron-mobility transistors(HEMTs) and metal-insulator-semiconductor HEMTs (MIS-HEMTs). A 20-nm LPCVD-SiNx grown at 650 °C features a high breakdownE-field of 13 MV/cm and a large conduction-band offset of 2.75 eV to GaN. High ON/OFF current ratio (~1010) as well as breakdown voltage |
内容类型 | 期刊论文 |
源URL | [http://159.226.55.106/handle/172511/16131] ![]() |
专题 | 微电子研究所_高频高压器件与集成研发中心 |
推荐引用方式 GB/T 7714 | Wang XH. Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs[J]. Journal of Vacuum Science & Technology B,2016. |
APA | 王鑫华.(2016).Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs.Journal of Vacuum Science & Technology B. |
MLA | 王鑫华."Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs".Journal of Vacuum Science & Technology B (2016). |
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