InGaAs Complementary metal-oxide-semiconductor fabricated on GaAs Substrate using Al2O3 as gate oxide

	InGaAs Complementary metal-oxide-semiconductor fabricated on GaAs Substrate using Al2O3 as gate oxide
	Zhou SH(周生辉); Liu GM(刘桂明); Liu HG(刘洪刚); Ceng ZH(曾振华); Zhao W(赵威); Sun B(孙兵); Wang SK(王盛凯); Chang HD(常虎东)
	2014-09-16
页码	120/3
会议录	ICSICT2014, Guilin China
内容类型	会议论文
源URL	[http://10.10.10.126/handle/311049/12844]
专题	微电子研究所_高频高压器件与集成研发中心
通讯作者	Chang HD(常虎东)
推荐引用方式 GB/T 7714	Zhou SH,Liu GM,Liu HG,et al. InGaAs Complementary metal-oxide-semiconductor fabricated on GaAs Substrate using Al2O3 as gate oxide[C]. 见:.