Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge

	Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge
	Han L(韩乐); Wang SK(王盛凯); Xue BQ(薛百清); Liu HG(刘洪刚)
刊名	Chinese Physics B
	2014-02-20
公开日期	2015-04-15
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/12536]
专题	微电子研究所_高频高压器件与集成研发中心
通讯作者	Wang SK(王盛凯)
推荐引用方式 GB/T 7714	Han L,Wang SK,Xue BQ,et al. Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge[J]. Chinese Physics B,2014.
APA	韩乐,王盛凯,薛百清,&刘洪刚.(2014).Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge.Chinese Physics B.
MLA	韩乐,et al."Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge".Chinese Physics B (2014).