Modified Deal-Grove model for the thermal oxidation of Ge and Al2O3 capped Ge | |
Wang SK(王盛凯); Wang XL(王晓磊); Han L(韩乐); Liu HG(刘洪刚) | |
刊名 | Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials
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2013-09-27 | |
公开日期 | 2014-10-27 |
内容类型 | 期刊论文 |
源URL | [http://10.10.10.126/handle/311049/11920] ![]() |
专题 | 微电子研究所_高频高压器件与集成研发中心 |
通讯作者 | Liu HG(刘洪刚) |
推荐引用方式 GB/T 7714 | Wang SK,Wang XL,Han L,et al. Modified Deal-Grove model for the thermal oxidation of Ge and Al2O3 capped Ge[J]. Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,2013. |
APA | 王盛凯,王晓磊,韩乐,&刘洪刚.(2013).Modified Deal-Grove model for the thermal oxidation of Ge and Al2O3 capped Ge.Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials. |
MLA | 王盛凯,et al."Modified Deal-Grove model for the thermal oxidation of Ge and Al2O3 capped Ge".Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (2013). |
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