Dependence of Band Alignment and Interfacial Suboxide GeOx Thickness of Thermal GeO2/Ge Stacks on GeO2 Thickness by X-ray Photoelectron Spectroscopy

	Dependence of Band Alignment and Interfacial Suboxide GeOx Thickness of Thermal GeO2/Ge Stacks on GeO2 Thickness by X-ray Photoelectron Spectroscopy
	Wang SK(王盛凯); Wang XL(王晓磊); zhang J; Liu HG(刘洪刚)
刊名	Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials
	2013-09-27
公开日期	2014-10-27
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/11918]
专题	微电子研究所_高频高压器件与集成研发中心
通讯作者	Liu HG(刘洪刚)
推荐引用方式 GB/T 7714	Wang SK,Wang XL,zhang J,et al. Dependence of Band Alignment and Interfacial Suboxide GeOx Thickness of Thermal GeO2/Ge Stacks on GeO2 Thickness by X-ray Photoelectron Spectroscopy[J]. Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,2013.
APA	王盛凯,王晓磊,zhang J,&刘洪刚.(2013).Dependence of Band Alignment and Interfacial Suboxide GeOx Thickness of Thermal GeO2/Ge Stacks on GeO2 Thickness by X-ray Photoelectron Spectroscopy.Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
MLA	王盛凯,et al."Dependence of Band Alignment and Interfacial Suboxide GeOx Thickness of Thermal GeO2/Ge Stacks on GeO2 Thickness by X-ray Photoelectron Spectroscopy".Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (2013).