Dependence of Band Alignment and Interfacial Suboxide GeOx Thickness of Thermal GeO2/Ge Stacks on GeO2 Thickness by X-ray Photoelectron Spectroscopy | |
Wang SK(王盛凯); Wang XL(王晓磊); zhang J; Liu HG(刘洪刚) | |
刊名 | Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials
![]() |
2013-09-27 | |
公开日期 | 2014-10-27 |
内容类型 | 期刊论文 |
源URL | [http://10.10.10.126/handle/311049/11918] ![]() |
专题 | 微电子研究所_高频高压器件与集成研发中心 |
通讯作者 | Liu HG(刘洪刚) |
推荐引用方式 GB/T 7714 | Wang SK,Wang XL,zhang J,et al. Dependence of Band Alignment and Interfacial Suboxide GeOx Thickness of Thermal GeO2/Ge Stacks on GeO2 Thickness by X-ray Photoelectron Spectroscopy[J]. Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,2013. |
APA | 王盛凯,王晓磊,zhang J,&刘洪刚.(2013).Dependence of Band Alignment and Interfacial Suboxide GeOx Thickness of Thermal GeO2/Ge Stacks on GeO2 Thickness by X-ray Photoelectron Spectroscopy.Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials. |
MLA | 王盛凯,et al."Dependence of Band Alignment and Interfacial Suboxide GeOx Thickness of Thermal GeO2/Ge Stacks on GeO2 Thickness by X-ray Photoelectron Spectroscopy".Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (2013). |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论