Ultrathin GeOx Interfacial Repairer Formed by Thermal Oxidation for Germanium MOS Devices

	Ultrathin GeOx Interfacial Repairer Formed by Thermal Oxidation for Germanium MOS Devices
	Wang SK(王盛凯); Xue BQ(薛百清); Han L(韩乐); Liu HG(刘洪刚)
刊名	Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials
	2013-09-27
公开日期	2014-10-27
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/11916]
专题	微电子研究所_高频高压器件与集成研发中心
通讯作者	Liu HG(刘洪刚)
推荐引用方式 GB/T 7714	Wang SK,Xue BQ,Han L,et al. Ultrathin GeOx Interfacial Repairer Formed by Thermal Oxidation for Germanium MOS Devices[J]. Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,2013.
APA	王盛凯,薛百清,韩乐,&刘洪刚.(2013).Ultrathin GeOx Interfacial Repairer Formed by Thermal Oxidation for Germanium MOS Devices.Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
MLA	王盛凯,et al."Ultrathin GeOx Interfacial Repairer Formed by Thermal Oxidation for Germanium MOS Devices".Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (2013).