Enhanced Performance of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3 Passivation Layer

	Enhanced Performance of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3 Passivation Layer
	Chen HJ(陈鸿钧); Guo H(郭浩); Zhang X(张雄); Liu HG(刘洪刚)
刊名	Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,
	2013-09-27
公开日期	2014-10-27
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/11914]
专题	微电子研究所_高频高压器件与集成研发中心
通讯作者	Liu HG(刘洪刚)
推荐引用方式 GB/T 7714	Chen HJ,Guo H,Zhang X,et al. Enhanced Performance of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3 Passivation Layer[J]. Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,,2013.
APA	陈鸿钧,郭浩,张雄,&刘洪刚.(2013).Enhanced Performance of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3 Passivation Layer.Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,.
MLA	陈鸿钧,et al."Enhanced Performance of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3 Passivation Layer".Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials, (2013).