Enhanced Performance of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3 Passivation Layer | |
Chen HJ(陈鸿钧); Guo H(郭浩); Zhang X(张雄); Liu HG(刘洪刚) | |
刊名 | Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,
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2013-09-27 | |
公开日期 | 2014-10-27 |
内容类型 | 期刊论文 |
源URL | [http://10.10.10.126/handle/311049/11914] ![]() |
专题 | 微电子研究所_高频高压器件与集成研发中心 |
通讯作者 | Liu HG(刘洪刚) |
推荐引用方式 GB/T 7714 | Chen HJ,Guo H,Zhang X,et al. Enhanced Performance of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3 Passivation Layer[J]. Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,,2013. |
APA | 陈鸿钧,郭浩,张雄,&刘洪刚.(2013).Enhanced Performance of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3 Passivation Layer.Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,. |
MLA | 陈鸿钧,et al."Enhanced Performance of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3 Passivation Layer".Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials, (2013). |
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