Microwave Performance of In0.25Ga0.75As MOSFET with an InGaP interfacial layer

	Microwave Performance of In0.25Ga0.75As MOSFET with an InGaP interfacial layer
	Liu HG(刘洪刚); Liu GM(刘桂明); Sun B(孙兵); Chang HD(常虎东)
刊名	Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials
	2013-12-27
公开日期	2014-10-27
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/11912]
专题	微电子研究所_高频高压器件与集成研发中心
通讯作者	Liu HG(刘洪刚)
推荐引用方式 GB/T 7714	Liu HG,Liu GM,Sun B,et al. Microwave Performance of In0.25Ga0.75As MOSFET with an InGaP interfacial layer[J]. Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,2013.
APA	刘洪刚,刘桂明,孙兵,&常虎东.(2013).Microwave Performance of In0.25Ga0.75As MOSFET with an InGaP interfacial layer.Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
MLA	刘洪刚,et al."Microwave Performance of In0.25Ga0.75As MOSFET with an InGaP interfacial layer".Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (2013).