Microwave Performance of In0.25Ga0.75As MOSFET with an InGaP interfacial layer | |
Liu HG(刘洪刚); Liu GM(刘桂明); Sun B(孙兵); Chang HD(常虎东) | |
刊名 | Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials
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2013-12-27 | |
公开日期 | 2014-10-27 |
内容类型 | 期刊论文 |
源URL | [http://10.10.10.126/handle/311049/11912] ![]() |
专题 | 微电子研究所_高频高压器件与集成研发中心 |
通讯作者 | Liu HG(刘洪刚) |
推荐引用方式 GB/T 7714 | Liu HG,Liu GM,Sun B,et al. Microwave Performance of In0.25Ga0.75As MOSFET with an InGaP interfacial layer[J]. Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials,2013. |
APA | 刘洪刚,刘桂明,孙兵,&常虎东.(2013).Microwave Performance of In0.25Ga0.75As MOSFET with an InGaP interfacial layer.Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials. |
MLA | 刘洪刚,et al."Microwave Performance of In0.25Ga0.75As MOSFET with an InGaP interfacial layer".Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (2013). |
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