A Compact Model for Drift and Diffusion Memristor Applied in Neuron in circuit design

	A Compact Model for Drift and Diffusion Memristor Applied in Neuron in circuit design
	Zhao Y(赵莹); Fang C(方聪); Zhang XM(张续猛); Gong TC(龚天成); Xu XX(许晓欣); Luo Q(罗庆); Liu Q(刘琦); Li L(李泠); Zhang F(张锋); Liu M(刘明)
刊名	IEEE transactions on electron devices
	2018-10-01
文献子类	期刊论文
语种	英语
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/18970]
专题	微电子研究所_微电子器件与集成技术重点实验室
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Zhao Y,Fang C,Zhang XM,et al. A Compact Model for Drift and Diffusion Memristor Applied in Neuron in circuit design[J]. IEEE transactions on electron devices,2018.
APA	Zhao Y.,Fang C.,Zhang XM.,Gong TC.,Xu XX.,...&Liu M.(2018).A Compact Model for Drift and Diffusion Memristor Applied in Neuron in circuit design.IEEE transactions on electron devices.
MLA	Zhao Y,et al."A Compact Model for Drift and Diffusion Memristor Applied in Neuron in circuit design".IEEE transactions on electron devices (2018).