Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory

	Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory
	Gong TC(龚天成); Xu XX(许晓欣); Yu J(余杰); Dong DN(董大年); Lv HB(吕杭炳)
刊名	IEEE Electron Device Letters
	2018-07-23
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/18968]
专题	微电子研究所_微电子器件与集成技术重点实验室
推荐引用方式 GB/T 7714	Gong TC,Xu XX,Yu J,et al. Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory[J]. IEEE Electron Device Letters,2018.
APA	龚天成,许晓欣,余杰,董大年,&吕杭炳.(2018).Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory.IEEE Electron Device Letters.
MLA	龚天成,et al."Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory".IEEE Electron Device Letters (2018).