Analysis of tail bits generation of multilevel storage in resistive switching memory

	Analysis of tail bits generation of multilevel storage in resistive switching memory
	Liu J(刘璟); Xu XX(许晓欣); Chen CB(陈传兵); Gong TC(龚天成); Yu ZA(余兆安); Luo Q(罗庆); Yuan P(袁鹏); Dong DN(董大年); Liu Q(刘琦); Long SB(龙世兵)
刊名	Chinese Physics B
	2018-10-19
文献子类	期刊论文
语种	英语
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/18956]
专题	微电子研究所_微电子器件与集成技术重点实验室
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Liu J,Xu XX,Chen CB,et al. Analysis of tail bits generation of multilevel storage in resistive switching memory[J]. Chinese Physics B,2018.
APA	Liu J.,Xu XX.,Chen CB.,Gong TC.,Yu ZA.,...&Liu M.(2018).Analysis of tail bits generation of multilevel storage in resistive switching memory.Chinese Physics B.
MLA	Liu J,et al."Analysis of tail bits generation of multilevel storage in resistive switching memory".Chinese Physics B (2018).