A new surface-potential-based compact model for the MoS2 field effect transistors in active matrix display applications

	A new surface-potential-based compact model for the MoS2 field effect transistors in active matrix display applications
	Cao JC(曹劲琛); Peng SA(彭松昂); Wu QT(吴全潭); Li L(李泠); Geng D(耿玓); Yang GH(杨冠华); Lu ND(卢年端); Liu M(刘明)
刊名	Journal of Applied Physics
	2018-02-13
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/18942]
专题	微电子研究所_微电子器件与集成技术重点实验室
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Cao JC,Peng SA,Wu QT,et al. A new surface-potential-based compact model for the MoS2 field effect transistors in active matrix display applications[J]. Journal of Applied Physics,2018.
APA	Cao JC.,Peng SA.,Wu QT.,Li L.,Geng D.,...&Liu M.(2018).A new surface-potential-based compact model for the MoS2 field effect transistors in active matrix display applications.Journal of Applied Physics.
MLA	Cao JC,et al."A new surface-potential-based compact model for the MoS2 field effect transistors in active matrix display applications".Journal of Applied Physics (2018).