半导体存储单元、器件及其制备方法 | |
霍宗亮; 刘明 | |
2015-01-06 | |
著作权人 | 中国科学院微电子研究所 |
专利号 | US8927963 |
国家 | 美国 |
文献子类 | 发明专利 |
英文摘要 | A semiconductor memory cell, a semiconductor memory device, and a method for manufacturing the same are disclosed. The semiconductor memory cell may comprise: a substrate; a channel region on the substrate; a gate region above the channel region; a source region and a drain region on the substrate and at opposite sides of the channel region; and a buried layer, which is disposed between the substrate and the channel region and comprises a material having a forbidden band narrower than that of a material for the channel region material. The buried layer material has a forbidden band narrower than that of the channel region material, so that a hole barrier is formed in the buried layer. Due to the barrier, it is difficult for holes stored in the buried layer to leak out, resulting in an improved information holding duration of the memory cell utilizing the floating-body effect. |
公开日期 | 2012-03-18 |
申请日期 | 2011-06-30 |
语种 | 中文 |
内容类型 | 专利 |
源URL | [http://159.226.55.106/handle/172511/16347] |
专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | 霍宗亮,刘明. 半导体存储单元、器件及其制备方法. US8927963. 2015-01-06. |
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