Theoretical Modification of the Negative Miller Capacitance during the Switching Transients of IGBTs | |
Han ZS(韩郑生)![]() | |
刊名 | 半导体学报
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2016-07-01 | |
文献子类 | 期刊论文 |
英文摘要 | The insulated gate bipolar transistor(IGBT) has negative Miller capacitance during switching transients. It has conventionally been attributed to the voltage dependency of the Miller capacitnce. However this explanation has physical ambiguity, yet, it lacks a discussion of the conditions for the occurrence of negative Miller capacitance as well. We argue that it is the current dependence to the Miller capacitance that results in the negative case. In this paper, we provide a modification. |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://159.226.55.106/handle/172511/16264] ![]() |
专题 | 微电子研究所_硅器件与集成研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | Han ZS,Teng Y. Theoretical Modification of the Negative Miller Capacitance during the Switching Transients of IGBTs[J]. 半导体学报,2016. |
APA | Han ZS,&Teng Y.(2016).Theoretical Modification of the Negative Miller Capacitance during the Switching Transients of IGBTs.半导体学报. |
MLA | Han ZS,et al."Theoretical Modification of the Negative Miller Capacitance during the Switching Transients of IGBTs".半导体学报 (2016). |
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