Influences of total ionizing dose on single event effect sensitivity in floating gate cells

doi:10.1088/1674-1056/27/8/086103

	Influences of total ionizing dose on single event effect sensitivity in floating gate cells
	Zhao, Pei-Xiong2,3 ; Liu, Tian-Qi 1,2,3; Ye, Bing 2; Luo, Jie1,2,3 ; Sun, You-Mei2 ; Hou, Ming-Dong 2; Yin, Ya-Nan 2,3; Liu, Jie2 ; Ji, Qing-Gang 2,3
刊名	CHINESE PHYSICS B
	2018-08-01
卷号	27 期号:8 页码:086103
关键词	flash memories heavy ions synergistic effect total ionizing dose
ISSN号	1674-1056
DOI	10.1088/1674-1056/27/8/086103
英文摘要	The influences of total ionizing dose (TID) on the single event effect (SEE) sensitivity of 34-nm and 25-nm NAND flash memories are investigated in this paper. The increase in the cross section of heavy-ion single event upset (SEU) in memories that have ever been exposed to TID is observed, which is attributed to the combination of the threshold voltage shifts induced by gamma-rays and heavy ions. Retention errors in floating gate (FG) cells after heavy ion irradiation are observed. Moreover, the cross section of retention error increases if the memory has ever been exposed to TID. This effect is more evident at a low linear energy transfer (LET) value. The underlying mechanism is identified as the combination of the defects induced by gamma-rays and heavy ions, which increases the possibility to constitute a multi-trap assisted tunneling (m-TAT) path across the tunnel oxide.
资助项目	National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[U1532261] ; National Natural Science Foundation of China[11505243]
WOS关键词	FLASH MEMORIES ; LEAKAGE CURRENT ; HEAVY-IONS ; RETENTION ; EXPOSURE ; SPACE
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000442029100003
资助机构	National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/59265]
专题	近代物理研究所_材料研究中心
通讯作者	Liu, Jie
作者单位	1.Lanzhou Univ, Lanzhou 730000, Gansu, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Pei-Xiong,Liu, Tian-Qi,Ye, Bing,et al. Influences of total ionizing dose on single event effect sensitivity in floating gate cells[J]. CHINESE PHYSICS B,2018,27(8):086103.
APA	Zhao, Pei-Xiong.,Liu, Tian-Qi.,Ye, Bing.,Luo, Jie.,Sun, You-Mei.,...&Ji, Qing-Gang.(2018).Influences of total ionizing dose on single event effect sensitivity in floating gate cells.CHINESE PHYSICS B,27(8),086103.
MLA	Zhao, Pei-Xiong,et al."Influences of total ionizing dose on single event effect sensitivity in floating gate cells".CHINESE PHYSICS B 27.8(2018):086103.