Modeling the applicability of linear energy transfer on single event upset occurrence

doi:10.1088/1674-1137/37/6/066001

	Modeling the applicability of linear energy transfer on single event upset occurrence
	Geng Chao 1,2; Xi Kai 1,2; Zhang Zhan-Gang 1,2; Liu Jie2 ; Hou Ming-Dong 2; Gu Song1,2 ; Sun You-Mei2 ; Duan Jing-Lai2 ; Yao Hui-Jun2 ; Mo Dan2
刊名	CHINESE PHYSICS C
	2013-06-01
卷号	37
关键词	Seu Occurrence Let Ion Track Structure Energy Density
ISSN号	1674-1137
DOI	10.1088/1674-1137/37/6/066001
文献子类	Article
英文摘要	Geant4 tools were used to model the single event upset (SEU) of static random access memory cells induced by heavy ion irradiation. Simulated results obtained in two different regions of incident ion energies have been compared in order to observe the SEU occurrence by energetic ions and their effects on the radial ionization profile of deposited energy density. The disagreement of SEU cross sections of device response and radial distribution of deposited energy density have been observed in both low energy and high energy regions with equal linear energy transfer (LET) which correspond to the both sides of the Bragg peak. In the low energy region, SEUs induced by heavy ions are more dependent upon the incident ion species and radial distribution of deposited energy density, as compared with the high energy region. In addition, the velocity effect of the incident ion in silicon in the high energy region provides valuable feedback for gaining insight into the occurrence of SEU.
资助项目	National Natural Science Foundation of China[11179003] ; National Natural Science Foundation of China[10975164] ; National Natural Science Foundation of China[10805062] ; National Natural Science Foundation of China[11005134]
WOS关键词	SEU HARDENED SRAM ; HEAVY-ION ENERGY ; SIMULATION ; SILICON ; IMPACT
WOS研究方向	Physics
语种	英语
出版者	CHINESE PHYSICAL SOC
WOS记录号	WOS:000322937200009
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/48363]
专题	近代物理研究所_材料研究中心
通讯作者	Geng Chao
作者单位	1.Univ Chinese Acad Sci, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Geng Chao,Xi Kai,Zhang Zhan-Gang,et al. Modeling the applicability of linear energy transfer on single event upset occurrence[J]. CHINESE PHYSICS C,2013,37.
APA	Geng Chao.,Xi Kai.,Zhang Zhan-Gang.,Liu Jie.,Hou Ming-Dong.,...&Luo Jie.(2013).Modeling the applicability of linear energy transfer on single event upset occurrence.CHINESE PHYSICS C,37.
MLA	Geng Chao,et al."Modeling the applicability of linear energy transfer on single event upset occurrence".CHINESE PHYSICS C 37(2013).