Modification of structure and optical band-gap of nc-Si:H films with 30 and 196 MeV Kr-ions

doi:10.1016/j.nimb.2012.11.093

CORC > 近代物理研究所 > 中国科学院近代物理研究所 > 先进核能材料研究室（ADS）

	Modification of structure and optical band-gap of nc-Si:H films with 30 and 196 MeV Kr-ions
	Sun, Jianrong2 ; Zhu, Yabin 2; Wang, Zhiguang2 ; Wang, Dong 1,2; Song, Peng 1,2; Zhu, Huiping 1,2; Wang, Ji 1,2; Li, Yuanfei 1,2; Cui, Minghuan 1,2; Pang, Lilong 2
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2013-07-15
卷号	307 页码:419-423
关键词	Nc-si:h Film Ion irradiatIon Structure Optical Band-gap
ISSN号	0168-583X
DOI	10.1016/j.nimb.2012.11.093
文献子类	Article
英文摘要	In the present work, experimental results on irradiation effects of 30 and 196 MeV Kr-ions on nc-Si:H films are presented. The irradiation fluences are 5.0 x 10(13), 1.0 x 10(14) and 2.0 x 10(14) Kr-ions/cm(2), respectively. Irradiation induced modification on microstructure and optical properties of nc-Si:H films are studied by X-ray diffraction, Raman scattering and UV-Vis-NIR spectroscopy. The analyses results indicate that the irradiations lead to the decrease of crystalline fraction and crystallite size, as well as the increase of bond angle variation of amorphous network. The structural changes become more obvious with the nuclear energy loss increases. Moreover, with the ion fluence increases, the optical band-gap for samples irradiated with 30 MeV Kr-ions decreases gradually, while it for samples irradiated with 196 MeV Kr-ions decreases significantly at first and then remains nearly constant. It is considered that the irradiation induced atomic displacements in the films lead to the amorphization of crystalline phase and the decrease of short-range order in amorphous phase, and then result in the reduction of optical band-gap. (C) 2013 Elsevier B.V. All rights reserved.
WOS关键词	HYDROGENATED AMORPHOUS-SILICON ; MICROSTRUCTURE ; DEPOSITION ; TRACKS ; CVD ; AR
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000321722200093
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/48293]
专题	近代物理研究所_先进核能材料研究室（ADS）
通讯作者	Wang, Zhiguang
作者单位	1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Sun, Jianrong,Zhu, Yabin,Wang, Zhiguang,et al. Modification of structure and optical band-gap of nc-Si:H films with 30 and 196 MeV Kr-ions[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2013,307:419-423.
APA	Sun, Jianrong.,Zhu, Yabin.,Wang, Zhiguang.,Wang, Dong.,Song, Peng.,...&Yao, Cunfeng.(2013).Modification of structure and optical band-gap of nc-Si:H films with 30 and 196 MeV Kr-ions.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,307,419-423.
MLA	Sun, Jianrong,et al."Modification of structure and optical band-gap of nc-Si:H films with 30 and 196 MeV Kr-ions".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 307(2013):419-423.