High-Temperature Annealing Induced He Bubble Evolution in Low Energy He Ion Implanted 6H-SiC

doi:10.1088/0256-307X/34/5/052801

CORC > 近代物理研究所 > 中国科学院近代物理研究所 > 先进核能材料研究室（ADS）

	High-Temperature Annealing Induced He Bubble Evolution in Low Energy He Ion Implanted 6H-SiC
	Li, Bing-Sheng3 ; Liu, Yu-Zhu 2; Zhang, Li 1
刊名	CHINESE PHYSICS LETTERS
	2017-05-01
卷号	34 页码:4
ISSN号	0256-307X
DOI	10.1088/0256-307X/34/5/052801
英文摘要	Bubble evolution in low energy and high dose He-implanted 6H-SiC upon thermal annealing is studied. The "0001"-oriented 6H-SiC wafers are implanted with 15 keV helium ions at a dose of 1x10(17) cm(-2) at room temperature. The samples with post-implantation are annealed at temperatures of 1073, 1173, 1273, and 1473K for 30 min. He bubbles in the wafers are examined via cross-sectional transmission electron microscopy (XTEM) analysis. The results present that nanoscale bubbles are almost homogeneously distributed in the damaged layer of the as-implanted sample, and no significant change is observed in the He-implanted sample after 1073K annealing. Upon 1193K annealing, almost full recrystallization of He-implantation-induced amorphization in 6H-SiC is observed. In addition, the diameters of He bubbles increase obviously. With continually increasing temperatures to 1273K and 1473 K, the diameters of He bubbles increase and the number density of lattice defects decreases. The growth of He bubbles after high temperature annealing abides by the Ostwald ripening mechanism. The mean diameter of He bubbles located at depths of 120-135nm as a function of annealing temperature is fitted in terms of a thermal activated process which yields an activation energy of 1.914+0.236 eV.
资助项目	National Natural Science Foundation of China[11475229]
WOS关键词	HELIUM ; IRRADIATION
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000403269000010
资助机构	National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/44929]
专题	近代物理研究所_先进核能材料研究室（ADS）
通讯作者	Li, Bing-Sheng
作者单位	1.Lanzhou Univ Technol, Sch Sci, Dept Phys, Lanzhou 730050, Peoples R China 2.Nanjing Univ Informat Sci & Technol, Jiangsu Collaborat Innovat Ctr Atmospher Environm, Nanjing 210044, Jiangsu, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Li, Bing-Sheng,Liu, Yu-Zhu,Zhang, Li. High-Temperature Annealing Induced He Bubble Evolution in Low Energy He Ion Implanted 6H-SiC[J]. CHINESE PHYSICS LETTERS,2017,34:4.
APA	Li, Bing-Sheng,Liu, Yu-Zhu,&Zhang, Li.(2017).High-Temperature Annealing Induced He Bubble Evolution in Low Energy He Ion Implanted 6H-SiC.CHINESE PHYSICS LETTERS,34,4.
MLA	Li, Bing-Sheng,et al."High-Temperature Annealing Induced He Bubble Evolution in Low Energy He Ion Implanted 6H-SiC".CHINESE PHYSICS LETTERS 34(2017):4.