Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout

	Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout
	Duan Jing-Lai2 ; En Yun-Fei ; Xi Kai 1; Mo Dan2,3 ; Luo Jie2,3 ; Yao Hui-Jun2 ; Geng Chao 2; Gu Song2,3 ; Su Hong2 ; Sun You-Mei2
刊名	NUCLEAR SCIENCE AND TECHNIQUES
	2015-10-01
卷号	26 页码:7
关键词	Azimuth Dual interlocked cell Multiple-bit upset Single event upset
ISSN号	1001-8042
英文摘要	Experimental evidence is presented showing obvious azimuthal dependence of single event upsets (SEU) and multiple-bit upset (MBU) patterns in radiation hardened by design (RHBD) and MBU-sensitive static random access memories (SRAMs), due to the anisotropic device layouts. Depending on the test devices, a discrepancy from 24.5% to 50% in the SEU cross sections of dual interlock cell (DICE) SRAMs is shown between two perpendicular ion azimuths under the same tilt angle. Significant angular dependence of the SEU data in this kind of design is also observed, which does not fit the inverse-cosine law in the effective LET method. Ion trajectory-oriented MBU patterns are identified, which is also affected by the topological distribution of sensitive volumes. Due to that the sensitive volumes are periodically isolated by the BL/BLB contacts along the Y-axis direction, double-bit upsets along the X-axis become the predominant configuration under normal incidence. Predominant triple-bit upset and quadruple-bit upset patterns are the same under different ion azimuths (L-shaped and square-shaped configurations, respectively). Those results suggest that traditional RPP/IRPP model should be promoted to consider the azimuthal and angular dependence of single event effects in certain designs. During earth-based evaluation of SEE sensitivity, worst case beam direction, i.e., the worst case response, should be revealed to avoid underestimation of the on-orbit error rate.
资助项目	National Natural Science Foundation of China[11179003] ; National Natural Science Foundation of China[10975164] ; National Natural Science Foundation of China[61204112] ; National Natural Science Foundation of China[61204116] ; China Postdoctoral Science Foundation[2014M552170]
WOS关键词	DESIGN ; CMOS ; TECHNOLOGY
WOS研究方向	Nuclear Science & Technology ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000365459200013
资助机构	National Natural Science Foundation of China ; China Postdoctoral Science Foundation
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/41110]
专题	近代物理研究所_材料研究中心
通讯作者	Liu Jie
作者单位	1.China Elect Prod Reliabil & Environm Testing Res, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Duan Jing-Lai,En Yun-Fei,Xi Kai,et al. Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout[J]. NUCLEAR SCIENCE AND TECHNIQUES,2015,26:7.
APA	Duan Jing-Lai.,En Yun-Fei.,Xi Kai.,Mo Dan.,Luo Jie.,...&Zhang Zhan-Gang.(2015).Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout.NUCLEAR SCIENCE AND TECHNIQUES,26,7.
MLA	Duan Jing-Lai,et al."Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout".NUCLEAR SCIENCE AND TECHNIQUES 26(2015):7.