Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout | |
Duan Jing-Lai2![]() ![]() ![]() ![]() ![]() ![]() ![]() | |
刊名 | NUCLEAR SCIENCE AND TECHNIQUES
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2015-10-01 | |
卷号 | 26页码:7 |
关键词 | Azimuth Dual interlocked cell Multiple-bit upset Single event upset |
ISSN号 | 1001-8042 |
英文摘要 | Experimental evidence is presented showing obvious azimuthal dependence of single event upsets (SEU) and multiple-bit upset (MBU) patterns in radiation hardened by design (RHBD) and MBU-sensitive static random access memories (SRAMs), due to the anisotropic device layouts. Depending on the test devices, a discrepancy from 24.5% to 50% in the SEU cross sections of dual interlock cell (DICE) SRAMs is shown between two perpendicular ion azimuths under the same tilt angle. Significant angular dependence of the SEU data in this kind of design is also observed, which does not fit the inverse-cosine law in the effective LET method. Ion trajectory-oriented MBU patterns are identified, which is also affected by the topological distribution of sensitive volumes. Due to that the sensitive volumes are periodically isolated by the BL/BLB contacts along the Y-axis direction, double-bit upsets along the X-axis become the predominant configuration under normal incidence. Predominant triple-bit upset and quadruple-bit upset patterns are the same under different ion azimuths (L-shaped and square-shaped configurations, respectively). Those results suggest that traditional RPP/IRPP model should be promoted to consider the azimuthal and angular dependence of single event effects in certain designs. During earth-based evaluation of SEE sensitivity, worst case beam direction, i.e., the worst case response, should be revealed to avoid underestimation of the on-orbit error rate. |
资助项目 | National Natural Science Foundation of China[11179003] ; National Natural Science Foundation of China[10975164] ; National Natural Science Foundation of China[61204112] ; National Natural Science Foundation of China[61204116] ; China Postdoctoral Science Foundation[2014M552170] |
WOS关键词 | DESIGN ; CMOS ; TECHNOLOGY |
WOS研究方向 | Nuclear Science & Technology ; Physics |
语种 | 英语 |
出版者 | ELSEVIER SCIENCE BV |
WOS记录号 | WOS:000365459200013 |
资助机构 | National Natural Science Foundation of China ; China Postdoctoral Science Foundation |
内容类型 | 期刊论文 |
源URL | [http://119.78.100.186/handle/113462/41110] ![]() |
专题 | 近代物理研究所_材料研究中心 |
通讯作者 | Liu Jie |
作者单位 | 1.China Elect Prod Reliabil & Environm Testing Res, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
推荐引用方式 GB/T 7714 | Duan Jing-Lai,En Yun-Fei,Xi Kai,et al. Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout[J]. NUCLEAR SCIENCE AND TECHNIQUES,2015,26:7. |
APA | Duan Jing-Lai.,En Yun-Fei.,Xi Kai.,Mo Dan.,Luo Jie.,...&Zhang Zhan-Gang.(2015).Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout.NUCLEAR SCIENCE AND TECHNIQUES,26,7. |
MLA | Duan Jing-Lai,et al."Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout".NUCLEAR SCIENCE AND TECHNIQUES 26(2015):7. |
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