Photoluminescence of Ar+ implanted sapphire before and after annealing

	Photoluminescence of Ar+ implanted sapphire before and after annealing
	Yi-Tao, Yang1,2 ; Li-Hong, Zhou 1,2; Chong-Hong, Zhang1 ; Bing-Sheng, Li1,2 ; Yin, Song 1
刊名	ACTA PHYSICA SINICA
	2008-04-01
卷号	57 页码:2562-2566
关键词	Al2O3 ion-implantation annealing photoluminescence
ISSN号	1000-3290
英文摘要	Single crystals of sapphire (Al2O3) with (0001), (10 (1) over bar0) and (11 (2) over bar0) orientations were implanted at 623 K with 110 keV Ar ions to fluence of 9.5 x 10(16) cm(-2). The ion-implanted Al2O3 samples were annealed at 873, 1073, 1273 and 1373 K for 60 min in vacuum and in air, respectively. Photoluminescence (PL) spectra of the as-implanted samples showed an emission band at 506 nm, with excitation wavelength at 300 nm. The PL peak intensity of (0001) and ( 10 (1) over bar0) orientation samples were maximum after annealing at 1073 K in both vacuum and in air. The annealing in air at 873, 1073 and 1273 K lead to much higher PL peak intensity compared to annealing in vacuum. In all the samples the emission band disappeared after annealing at 1373 K both in vacuum and in air. The experimental results indicate that annealing temperature, annealing atmosphere and crystal orientation play important roles for the PL peak intensity at 506 nm of sapphire implanted with Ar ions. The PL peak at 506 nm after Ar-implantation and annealing is related with the population of interstitial Al atoms introduced by the ion bombardment and the formation of argon gas bubbles and the resolution of Ar atoms during annealing.
WOS关键词	AL2O3 ; SILICON
WOS研究方向	Physics
语种	英语
出版者	CHINESE PHYSICAL SOC
WOS记录号	WOS:000255087200093
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/28563]
专题	近代物理研究所_材料研究中心近代物理研究所_先进核能材料研究室（ADS）
通讯作者	Li-Hong, Zhou
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Yi-Tao, Yang,Li-Hong, Zhou,Chong-Hong, Zhang,et al. Photoluminescence of Ar+ implanted sapphire before and after annealing[J]. ACTA PHYSICA SINICA,2008,57:2562-2566.
APA	Yi-Tao, Yang,Li-Hong, Zhou,Chong-Hong, Zhang,Bing-Sheng, Li,&Yin, Song.(2008).Photoluminescence of Ar+ implanted sapphire before and after annealing.ACTA PHYSICA SINICA,57,2562-2566.
MLA	Yi-Tao, Yang,et al."Photoluminescence of Ar+ implanted sapphire before and after annealing".ACTA PHYSICA SINICA 57(2008):2562-2566.