Degradation mechanisms of optoelectric properties of GaN via highly-charged Bi-209(33+) ions irradiation

doi:10.1016/j.apsusc.2018.01.170

	Degradation mechanisms of optoelectric properties of GaN via highly-charged Bi-209(33+) ions irradiation
	Xian, Y. Q.1,2; Zhang, L. Q.1,2; Li, J. Y.2; Su, C. H.1,2; Chen, Y. G.1,2; Yan, T. X.1,2; Ding, Z. N.2; Liu, H. P.2; Liu, J.1,2 ; Zhang, C. H.2
刊名	APPLIED SURFACE SCIENCE
	2018-05-15
卷号	440 页码:814-820
关键词	GaN Highly-charged bismuth-ion irradiation Raman spectrum Varying temperature photoluminescence (PL) spectrum Optoelectric properties
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2018.01.170
英文摘要	N-type gallium nitride (GaN) epitaxial layers were subjected to 990-keV Bi33+ ions irradiation to various fluences. Optoelectric properties of the irradiated-GaN specimens were studied by means of Raman scattering and variable temperature photoluminescence (PL) spectroscopy. Raman spectra reveal that both the free-carrier concentration and its mobility generally decrease with a successive increase in ion fluence. Electro-optic mechanisms dominated the electrical transport to a fluence of 1.061 x 10(12) Bi33+/cm(2). Above this fluence, electrical properties were governed by the deformation potential. The appearance of vacancy-type defects results in an abrupt degradation in electrical transports. Varying temperature photoluminescence (PL) spectra display that all emission lines of 1.061 x 10(12) Bi33+/cm(2)-irradiated specimen present a general remarkable thermal redshift, quenching, and broadening, including donorbound- exciton peak, yellow luminescence band, and LO-phonon replicas. Moreover, as the temperature rises, a transformation from excitons (donor-acceptor pairs' luminescence) to band-to-band transitions (donor-acceptor combinations) was found, and the shrinkage effect of the band gap dominated the shift of the peak position gradually, especially the temperature increases above 150 K. In contrast to the un-irradiated specimen, a sensitive temperature dependence of all photoluminescence (PL) lines' intensity obtained from 1.061 x 10(12) Bi33+/cm(2)-irradiated specimen was found. Mechanisms underlying were discussed. (C) 2018 Elsevier B. V. All rights reserved.
资助项目	National Natural Science Foundation of China[11675231] ; National Natural Science Foundation of China[91426304] ; National Natural Science Foundation of China[11105191]
WOS关键词	BLOCK-COPOLYMER LITHOGRAPHY ; RAMAN-SCATTERING ; YELLOW LUMINESCENCE ; LO-PHONON ; EPITAXIAL LAYERS ; FILMS ; SEMICONDUCTORS ; DEPOSITION ; RESONANCE ; RADIATION
WOS研究方向	Chemistry ; Materials Science ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000427461000095
资助机构	National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/24440]
专题	近代物理研究所_能源材料研究组近代物理研究所_材料研究中心
通讯作者	Zhang, C. H.
作者单位	1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, 509 Nan Chang Rd, Lanzhou 730000, Gansu, Peoples R China
推荐引用方式 GB/T 7714	Xian, Y. Q.,Zhang, L. Q.,Li, J. Y.,et al. Degradation mechanisms of optoelectric properties of GaN via highly-charged Bi-209(33+) ions irradiation[J]. APPLIED SURFACE SCIENCE,2018,440:814-820.
APA	Xian, Y. Q..,Zhang, L. Q..,Li, J. Y..,Su, C. H..,Chen, Y. G..,...&Zhang, C. H..(2018).Degradation mechanisms of optoelectric properties of GaN via highly-charged Bi-209(33+) ions irradiation.APPLIED SURFACE SCIENCE,440,814-820.
MLA	Xian, Y. Q.,et al."Degradation mechanisms of optoelectric properties of GaN via highly-charged Bi-209(33+) ions irradiation".APPLIED SURFACE SCIENCE 440(2018):814-820.