| 题名 | 惰性气体离子注入6H-SiC的力学性能与缺陷演化研究 |
| 作者 | 徐超亮 |
| 答辩日期 | 2011-05 |
| 授予单位 | 中国科学院研究生院 |
| 授予地点 | 北京 |
| 导师 | 张崇宏 |
| 关键词 | 离子注入 力学性能 缺陷 6h-sic 纳米压痕仪 |
| 学位名称 | 硕士 |
| 其他题名 | Mechanical properties and defects evolution of inert-gases ion implanted 6H-SiC |
| 学位专业 | 粒子物理与原子核物理 |
| 英文摘要 | This paper discusses the irradiation damage, micro-structure and the mechanical properties of 6H-SiC by multiple analysis tools. SiC was irradiated with 5 MeV krypton ion and 2.3 MeV neon ion at room temperature to the fluences of 5x1013, 2x1014, 1x1015 Kr ions/cm2 and 2x1014, 1.1x1015, 3.75x1015 Ne ions/cm2 and then anneal at room temperature, 500, 700 and 1000 oC in vacuum circumstance. Nanoindentation, high resolution XRD, AFM and Raman spectrum were carried out to study the the irradiation damage, micro-structure and the mechanical properties of 6H-SiC. Nanoindentation experiment shows that the hardness values of specimens are related to irradiation fluence. In specimens Kr-implanted, the maximum hardness values arising at different temperature for different irradiated fluences, whereas the hardness values of specimens Ne-implanted arise at 700 oC. All of the discussions above are connected with defects evolution. The results of high resolution XRD indicate that the strain increase with increase fluence. Strain alteration in specimens is a function of annealing temperature and irradiated fluence in annealing process. Except for the strain abrupt increasing at 700 oC in the specimen irradiated to fluence of 2x1014Kr/cm2, the strain values in other specimens implanted with Kr and Ne gradually decrease with increasing annealing temperature. Cracks were observed at the corners of nano-indenter imprints by atomic force microscopy (AFM) in virgin SiC and annealed specimen and crack length varies with implantation dose and annealing temperature. The Raman spectrum of implanted SiC displays not only Si-C bonds vibration peaks, but also homonuclear Si-Si and C-C bond vibration peaks. The Si-C bond vibration peaks gradually strengthen with increasing temperature. It is found that crystal Si-Si bond vibration peaks do not change when annealing, but amorphous Si-Si bond vibration peaks disappear with increasing temperature. Relative Raman Intensity (RRI) decreases versus increasing dose and trends to saturate, but the saturation dose is different for various anneal temperature. |
| 内容类型 | 学位论文 |
| 源URL | [http://ir.impcas.ac.cn/handle/113462/17603]  |
| 专题 | 近代物理研究所_材料研究中心 近代物理研究所_能源材料研究组 |
| 作者单位 | 中国科学院近代物理研究所 |
| 推荐引用方式 GB/T 7714 | 徐超亮. 惰性气体离子注入6H-SiC的力学性能与缺陷演化研究[D]. 北京. 中国科学院研究生院. 2011. |
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