| 题名 | Kr和Ne离子注入6H-SiC晶体缺陷的产生及退火行为 |
| 作者 | 孟彦成 |
| 答辩日期 | 2013-03 |
| 授予单位 | 中国科学院研究生院 |
| 授予地点 | 北京 |
| 导师 | 张崇宏 |
| 关键词 | 6h-sic 离子注入 缺陷 Tem 非晶化 |
| 学位名称 | 硕士 |
| 其他题名 | Production and annealing behavior of lattice damage in energetic Kr and Ne-ion implanted 6H-SiC |
| 学位专业 | 凝聚态物理 |
| 英文摘要 | Abstract Production and annealing behavior of lattice damage in energetic Kr and Ne-ion implanted 6H-SiC Yancheng Meng Directed by: Professor Chonghong Zhang Due to its good mechanical properties, high-temperature chemical inertness, and small neutron capture cross sections together with its wide band gap, high breakdown electric field, high thermal conductivity, high saturated electron drift velocity and good radiation resistance, SiC is very suitable for use in harsh environment such as advanced nuclear reactors and radioactive nuclear waste disposals and shows great potential in the development of high temperature, high frequency and high power electronic devices. This paper intends to discuss the production and evolution of radiation damage in MeV Ne and Kr-ion implanted SiC based on TEM observation. Specimens of 6H-SiC were irradiated with 5 MeV Kr ion and 2.3 MeV Ne ions at room temperature to fluences of 5x1013, 2x1014, 1x1015 Kr ions/cm2, and to 1.1x1015, 3.75x1015 Ne ions/cm2, respectively, and were subsequently annealed at 500, 700 and 1000 ℃ in vacuum. The cross-sectional specimens for TEM observation were prepared by using a small angle cleavage technique, and were investigated in a transmission electron microscope of a JEOL 2010. The microstructures were observed to be dominated by simple defects, planar defects and crystal amorphization under different implantation dose. The amorphous-crystalline (a/c) transition region was observed, where Moire fringes were significant. Recrystallization of the buried amorphous layer occurred after thermal annealing. Mechanisms underlying the changes of microstructures and their correlation with results from HRXRD, Raman scattering and nano-indentation measurements are discussed. |
| 内容类型 | 学位论文 |
| 源URL | [http://ir.impcas.ac.cn/handle/113462/17600]  |
| 专题 | 近代物理研究所_材料研究中心 近代物理研究所_能源材料研究组 |
| 作者单位 | 中国科学院近代物理研究所 |
| 推荐引用方式 GB/T 7714 | 孟彦成. Kr和Ne离子注入6H-SiC晶体缺陷的产生及退火行为[D]. 北京. 中国科学院研究生院. 2013. |
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