Annealing ambient on the evolution of He-induced voids in silicon

doi:10.1016/j.apsusc.2011.02.125

	Annealing ambient on the evolution of He-induced voids in silicon
	Zhang, C. H.1; Zhang, L. Q.1; Zhang, H. H.3; Zhang, Y.3; Han, L. H.3; Zhou, L. H.3; Wang, D. N.2; Zhong, Y. R.2; Li, B. S.1,3; Yang, Y. T.1,3
刊名	APPLIED SURFACE SCIENCE
	2011-06-01
卷号	257 期号:16 页码:7036-7040
关键词	Silicon Positron annihilation Void Annealing ambient TEM
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2011.02.125
英文摘要	The effects of annealing ambient on the He-induced voids in silicon were investigated using the combination of the Doppler broadening spectroscopy using a variable-energy positron beam and cross-section transmission electron microscopy (XTEM). A < 1 0 0 >-oriented silicon wafer was implanted with He ions at an energy of 15 keV to a dose of 2 x 10(16) cm(-2) at room temperature. Post-implantation, the samples were annealed at a temperature of 1000 degrees C in the ambient of vacuum, argon, nitrogen, air and oxygen. Positron annihilation spectroscopy (PAS) spectra varied with the annealing ambient. XTEM micrographs demonstrated that the density of He-induced voids could be influenced by the annealing ambient. (C) 2011 Elsevier B.V. All rights reserved.
资助项目	National Natural Science Foundation of China[10979063] ; National Natural Science Foundation of China[11015130]
WOS关键词	POSITRON ANNIHILATION SPECTROSCOPY ; VACANCY CLUSTERS ; INDUCED CAVITIES ; SI ; HELIUM ; OXYGEN ; BEAM ; DEFECTS ; IMPLANTATION ; TEMPERATURE
WOS研究方向	Chemistry ; Materials Science ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000290015600003
资助机构	National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://ir.impcas.ac.cn/handle/113462/15013]
专题	近代物理研究所_能源材料研究组
通讯作者	Li, B. S.
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China 3.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Zhang, C. H.,Zhang, L. Q.,Zhang, H. H.,et al. Annealing ambient on the evolution of He-induced voids in silicon[J]. APPLIED SURFACE SCIENCE,2011,257(16):7036-7040.
APA	Zhang, C. H..,Zhang, L. Q..,Zhang, H. H..,Zhang, Y..,Han, L. H..,...&Yang, Y. T..(2011).Annealing ambient on the evolution of He-induced voids in silicon.APPLIED SURFACE SCIENCE,257(16),7036-7040.
MLA	Zhang, C. H.,et al."Annealing ambient on the evolution of He-induced voids in silicon".APPLIED SURFACE SCIENCE 257.16(2011):7036-7040.