PL and XPS study of radiation damage created by various slow highly charged heavy ions on GaN epitaxial layers

doi:10.1016/j.nimb.2011.08.001

	PL and XPS study of radiation damage created by various slow highly charged heavy ions on GaN epitaxial layers
	Zhang, C. H.; Sun, Y. M.; Jin, Y. F.; Zhang, L. Q.; Yang, Y. T.; Han, L. H.; Gou, J.
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2011-12-01
卷号	269 期号:23 页码:2835-2839
关键词	Gallium nitride (GaN) Highly charged ions (HCl) Photoluminescence (PL) X-ray photoelectron spectroscopy (XPS)
ISSN号	0168-583X
DOI	10.1016/j.nimb.2011.08.001
英文摘要	Photoluminescence (PL) spectrum, in conjunction with X-ray photoelectron spectroscopy (XPS) is used to evaluate the surface damage of GaN layer by highly-charged Xe(q+) (18 <= q <= 30), Ar(q+) (6 <= q <= 16) and Pb(q+) (q = 25,35) ions. The intensity of PL emission of GaN layer, including near band-edge peak and yellow luminescence, decreases with increasing fluence and charge state of the incident ions. Finally the PL emission is completely quenched after irradiation to high fluences at high charge state. A new peak at 450 nm appeared in PL spectra of the specimens irradiated with Xe(18+), Ar(6+) and Ar(11+), indicating that radioactive recombination within donor-acceptor pairs (DAPs) during irradiation. After irradiation, XPS spectra show N deficient or Ga rich on GaN surface and XPS spectra of Ga3d core levels indicate spectral peak evidently shifts from a Ga-N to Ga-Ga and Ga-O bond. The relative content of Ga-N bond decreases and the content of Ga-Ga bond increases with the increase of ion fluence and ion charge state. The binding energy of Ga3d(5/2) electron corresponding to Ga-Ga bond of the irradiated GaN film is found to be smaller than that of metallic Gallium (Ga(0)), which can be attributed to irradiation damage. (C) 2011 Elsevier B.V. All rights reserved.
资助项目	National Natural Science Foundation of China[10979063] ; National Natural Science Foundation of China[11105191] ; National Basic Research Program of China[2010CB832904]
WOS关键词	YELLOW LUMINESCENCE ; GALLIUM NITRIDE ; LASER-ABLATION ; III-NITRIDES ; THIN-FILMS ; BAND ; ALN ; VACANCIES ; SURFACES ; INN
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000298072000024
资助机构	National Natural Science Foundation of China ; National Basic Research Program of China
内容类型	期刊论文
源URL	[http://ir.impcas.ac.cn/handle/113462/15007]
专题	近代物理研究所_能源材料研究组
通讯作者	Zhang, C. H.
作者单位	Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Zhang, C. H.,Sun, Y. M.,Jin, Y. F.,et al. PL and XPS study of radiation damage created by various slow highly charged heavy ions on GaN epitaxial layers[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2011,269(23):2835-2839.
APA	Zhang, C. H..,Sun, Y. M..,Jin, Y. F..,Zhang, L. Q..,Yang, Y. T..,...&Gou, J..(2011).PL and XPS study of radiation damage created by various slow highly charged heavy ions on GaN epitaxial layers.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,269(23),2835-2839.
MLA	Zhang, C. H.,et al."PL and XPS study of radiation damage created by various slow highly charged heavy ions on GaN epitaxial layers".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 269.23(2011):2835-2839.