Evolution of defects in silicon carbide implanted with helium ions

doi:10.1016/j.nimb.2013.10.064

	Evolution of defects in silicon carbide implanted with helium ions
	Zhang CH(张崇宏)
刊名	Nuclear Instruments and Methods in Physics Research B
	2014-01-15
卷号	326 期号:326 页码:345–350
关键词	Silicon carbide Helium Implantation Defect Radiation damage
ISSN号	0168-583X
DOI	10.1016/j.nimb.2013.10.064
英文摘要	Effects of accumulation of radiation damage in silicon carbide are important concerns for the use of silicon carbide in advanced nuclear energy systems. In the present work lattice damage in silicon carbide crystal (4H type) implanted with 100 keV He-4(+) ions was investigated with Rutherford backscattering spectrometry in channeling geometry (RBS/c) and positron beam Doppler broadening spectrometry (PBDB). Helium implantation was performed at the specimen temperature of 510 K to avoid amorphization of the SiC crystal. Fluences of helium ions were selected to be in the range from 1 x 10(16) to 3 x 10(16) ions cm(-2), around the dose threshold for the formation of observable helium bubbles under transmission electron microscopes (TEM).
资助项目	National Magnetic Confinement Fusion Program[2011GB108003]
WOS关键词	VACANCY-TYPE DEFECTS ; POSITRON-ANNIHILATION ; DAMAGE ; BEAM ; IRRADIATION ; TEMPERATURE ; ACCUMULATION ; DEPENDENCE ; CERAMICS ; CRYSTALS
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000335631300079
公开日期	2014-12-16
内容类型	期刊论文
源URL	[http://ir.impcas.ac.cn/handle/113462/12540]
专题	近代物理研究所_能源材料研究组近代物理研究所_材料研究中心
推荐引用方式 GB/T 7714	Zhang CH. Evolution of defects in silicon carbide implanted with helium ions[J]. Nuclear Instruments and Methods in Physics Research B,2014,326(326):345–350.
APA	Zhang CH.(2014).Evolution of defects in silicon carbide implanted with helium ions.Nuclear Instruments and Methods in Physics Research B,326(326),345–350.
MLA	Zhang CH."Evolution of defects in silicon carbide implanted with helium ions".Nuclear Instruments and Methods in Physics Research B 326.326(2014):345–350.