Electron emission and surface etching by slow and medium highly charged ions on HOPG surface

doi:10.1016/j.nimb.2013.04.024

CORC > 近代物理研究所 > 中国科学院近代物理研究所 > 兰州重离子研究装置

	Electron emission and surface etching by slow and medium highly charged ions on HOPG surface
	Xiao, GQ2 ; Wang, YY2 ; Sun, JR2 ; Zhao, YT2 ; Cheng, R2 ; Ren, JR 1,2; Yu, Y 2; Zhou, XM2 ; Lei, Y2 ; Wang, X 2
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2013
卷号	317 页码:33-36
关键词	Highly Charged Ions Electron Emission Surface Nanostructuring Hopg
DOI	10.1016/j.nimb.2013.04.024
英文摘要	Highly charged (Xe-129(q+), q = 10-30) ion-induced secondary electron emission and formation of nanostructure on the surface of highly oriented pyrolytic graphite (HOPG) have been studied on the 320 kV ECR platform for Highly Charged Ion Beam at IMP-CAS, Lanzhou. The experimental data of the total secondary electron yields are used to separate contributions of kinetic and potential electron yields. The estimated kinetic electron yields are about 17 and 35 electron/ion by ions with kinetic energies of 600 keV and 5 MeV, respectively. The potential electron yield increases linearly with increasing potential energy of the incident ion. The total electron yield, however, does not depend significantly on kinetic energy. AFM analysis of the HOPG surface bombarded with Xe30+ ions revealed regular hillock like nanostructure. The relationship between hillock size (height and width) and ion's energy (including potential energy and kinetic energy) shows the same trend with the total electron yield which increases with potential energy and is independent on incident kinetic energy. (C) 2013 Elsevier B.V. All rights reserved.
WOS关键词	SEPARATION; IMPACT
WOS记录号	WOS:000329378100007
内容类型	期刊论文
源URL	[http://ir.impcas.ac.cn/handle/113462/23353]
专题	近代物理研究所_兰州重离子研究装置近代物理研究所_实验物理中心近代物理研究所_先进核能材料研究室（ADS）
通讯作者	Wang, YY (reprint author), Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China.
作者单位	1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Xiao, GQ,Wang, YY,Sun, JR,et al. Electron emission and surface etching by slow and medium highly charged ions on HOPG surface[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2013,317:33-36.
APA	Xiao, GQ.,Wang, YY.,Sun, JR.,Zhao, YT.,Cheng, R.,...&Wang, YY .(2013).Electron emission and surface etching by slow and medium highly charged ions on HOPG surface.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,317,33-36.
MLA	Xiao, GQ,et al."Electron emission and surface etching by slow and medium highly charged ions on HOPG surface".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 317(2013):33-36.