Defect production in silicon irradiated with 750 MeV Ar ions

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	Defect production in silicon irradiated with 750 MeV Ar ions
	Zhu, ZY; Hou, MD; Jin, YF; Liu, CL; Wang, YS; Han, J
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	1998-02-01
卷号	135 期号:1-4 页码:260-264
关键词	irradiation defect silicon
ISSN号	0168-583X
英文摘要	Specimens of about 320 mu m thick and (1 1 1) oriented single crystalline silicon are irradiated with 750 MeV argon ions at room temperature to dose levels of 9 x 10(13) and 4.3 x 10(14) Ar/cm(2). Positron lifetime measurements, fourier transform infrared absorption (FT-IR) and electron paramagnetic resonance (EPR) techniques are applied to investigate the specimens. It is found that divacancies of neutral charge state are the main vacancy clusters induced by the irradiations. No amorphous phase is detected up to the highest dose. In the area where electronic processes are dominating a divacancy concentration around 7 x 10(16)/cm(3) is found which shows little change with dose. At the projected range where nuclear process is dominating the divacancy concentration increases dramatically with increasing of dose. It is argued that energy deposition through electronic processes can only induce limited damage in silicon and high electronic stopping power suppresses the formation of amorphous zones. (C) 1998 Elsevier Science B.V.
WOS关键词	IMPLANTED SILICON ; POSITRON ; OXYGEN
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000074395300047
公开日期	2011-08-26
内容类型	期刊论文
源URL	[http://ir.imp.cas.cn/handle/113462/10405]
专题	近代物理研究所_近代物理研究所知识存储（2010之前）近代物理研究所_实验物理中心
通讯作者	Zhu, ZY
作者单位	Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Zhu, ZY,Hou, MD,Jin, YF,et al. Defect production in silicon irradiated with 750 MeV Ar ions[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,1998,135(1-4):260-264.
APA	Zhu, ZY,Hou, MD,Jin, YF,Liu, CL,Wang, YS,&Han, J.(1998).Defect production in silicon irradiated with 750 MeV Ar ions.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,135(1-4),260-264.
MLA	Zhu, ZY,et al."Defect production in silicon irradiated with 750 MeV Ar ions".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 135.1-4(1998):260-264.