Defect production in silicon irradiated with 750 MeV Ar ions | |
Zhu, ZY; Hou, MD; Jin, YF; Liu, CL; Wang, YS![]() | |
刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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1998-02-01 | |
卷号 | 135期号:1-4页码:260-264 |
关键词 | irradiation defect silicon |
ISSN号 | 0168-583X |
英文摘要 | Specimens of about 320 mu m thick and (1 1 1) oriented single crystalline silicon are irradiated with 750 MeV argon ions at room temperature to dose levels of 9 x 10(13) and 4.3 x 10(14) Ar/cm(2). Positron lifetime measurements, fourier transform infrared absorption (FT-IR) and electron paramagnetic resonance (EPR) techniques are applied to investigate the specimens. It is found that divacancies of neutral charge state are the main vacancy clusters induced by the irradiations. No amorphous phase is detected up to the highest dose. In the area where electronic processes are dominating a divacancy concentration around 7 x 10(16)/cm(3) is found which shows little change with dose. At the projected range where nuclear process is dominating the divacancy concentration increases dramatically with increasing of dose. It is argued that energy deposition through electronic processes can only induce limited damage in silicon and high electronic stopping power suppresses the formation of amorphous zones. (C) 1998 Elsevier Science B.V. |
WOS关键词 | IMPLANTED SILICON ; POSITRON ; OXYGEN |
WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
语种 | 英语 |
出版者 | ELSEVIER SCIENCE BV |
WOS记录号 | WOS:000074395300047 |
公开日期 | 2011-08-26 |
内容类型 | 期刊论文 |
源URL | [http://ir.imp.cas.cn/handle/113462/10405] ![]() |
专题 | 近代物理研究所_近代物理研究所知识存储(2010之前) 近代物理研究所_实验物理中心 |
通讯作者 | Zhu, ZY |
作者单位 | Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
推荐引用方式 GB/T 7714 | Zhu, ZY,Hou, MD,Jin, YF,et al. Defect production in silicon irradiated with 750 MeV Ar ions[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,1998,135(1-4):260-264. |
APA | Zhu, ZY,Hou, MD,Jin, YF,Liu, CL,Wang, YS,&Han, J.(1998).Defect production in silicon irradiated with 750 MeV Ar ions.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,135(1-4),260-264. |
MLA | Zhu, ZY,et al."Defect production in silicon irradiated with 750 MeV Ar ions".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 135.1-4(1998):260-264. |
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