X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions

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	X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions
	Han Lu-Hui 1,2; Zhang Chong-Hong2 ; Zhang Li-Qing2 ; Sun You-Mei2 ; Song Yin2 ; Yang Yi-Tao1,2
刊名	ACTA PHYSICA SINICA
	2010-07-01
卷号	59 期号:7 页码:4584-4590
关键词	gallium nitride (GaN) crystal highly-charged heavy ions X-ray photoelectron spectroscopy (XPS)
ISSN号	1000-3290
英文摘要	We utilize slow highly charged ions of Xeq+ and Pbq+ to irradiate GaN crystal films grown on sapphire substrate, and use X-ray photoelectron spectroscopy to analyze its surface chemical composition and chemical state of the elements. The results show that highly charged ions can etch the sample surface obviously, and the GaN sample irradiated by highly charged ions has N depletion or is Ga rich on its surface. Besides, the relative content of Ga-Ga bond increases as the dose and charge state of the incident ions increase. In addition, the binding energy of Ga 3d(5/2) electrons corresponding to Ga-Ga bond of the irradiated GaN sample is smaller compared with that of the Ga bulk material. This can be attributed to the lattice damage, which shifts the binding energy of inner orbital electrons to the lower end.
资助项目	National Natural Science Foundation of China[10575124]
WOS关键词	INDUCED NITRIDATION ; GALLIUM NITRIDE ; SURFACE ; DAMAGE ; IMPLANTATION ; BOMBARDMENT ; NUCLEATION ; DEPENDENCE ; GROWTH ; OXIDE
WOS研究方向	Physics
语种	英语
出版者	CHINESE PHYSICAL SOC
WOS记录号	WOS:000280168700028
资助机构	National Natural Science Foundation of China
公开日期	2011-04-20
内容类型	期刊论文
源URL	[http://ir.imp.cas.cn/handle/113462/7723]
专题	近代物理研究所_近代物理研究所知识存储（2010之前）近代物理研究所_材料研究中心
通讯作者	Han Lu-Hui
作者单位	1.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Han Lu-Hui,Zhang Chong-Hong,Zhang Li-Qing,et al. X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions[J]. ACTA PHYSICA SINICA,2010,59(7):4584-4590.
APA	Han Lu-Hui,Zhang Chong-Hong,Zhang Li-Qing,Sun You-Mei,Song Yin,&Yang Yi-Tao.(2010).X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions.ACTA PHYSICA SINICA,59(7),4584-4590.
MLA	Han Lu-Hui,et al."X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions".ACTA PHYSICA SINICA 59.7(2010):4584-4590.