Slow highly charged ions induced electron emission from clean Si surfaces

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	Slow highly charged ions induced electron emission from clean Si surfaces
	Zhao Yong-Tao1 ; Xu Zhong-Feng 1,2; Wang Jian-Guo 2; Wang Yu-Yu1 ; Li De-Hui 1; Zhao Di 1,2; Xiao Guo-Qing1
刊名	ACTA PHYSICA SINICA
	2010-11-01
卷号	59 期号:11 页码:7803-7807
关键词	slow highly charged ions electron emission recoil atom stopping power
ISSN号	1000-3290
英文摘要	The electron emission yields from the interaction of slow highly charged ions (SHCI) He(2+), O(2+) and Ne(2+) with clean Si surface are measured separately. It is found that electron emission yield gamma increases proportionally to projectile kinetic energy E(p)/M(p), ranging from 0.75 keV/u to 10.5 keV/u (i.e. 3.8 x 10(5) m/s <= v(p) <= 1.42 x 10(6) m/s), and it is higher for heavy ions (O(2+) and Ne(2+)) than for light ion (He(2+)). For O(2+) and Ne(2+), gamma increases with Z(p) decreasing in our energy range, and it shows quite different from the result for higher projectile kinetic energy. After calculating the stopping power by using TRIM 2006, it is found that the fraction of secondary electrons induced by recoil atoms increases significantly at lower projectile energy, thereby leads to the differences in gamma for heavy ions O(2+) and Ne(2+) between lower and higher projectile kinetic energy.
资助项目	National Natural Science Foundation of China[11075125] ; National Natural Science Foundation of China[10805063]
WOS关键词	SECONDARY ELECTRONS ; WORK FUNCTION ; BOMBARDMENT ; SOLIDS ; YIELDS
WOS研究方向	Physics
语种	英语
出版者	CHINESE PHYSICAL SOC
WOS记录号	WOS:000284659900045
资助机构	National Natural Science Foundation of China
公开日期	2011-04-20
内容类型	期刊论文
源URL	[http://ir.imp.cas.cn/handle/113462/7713]
专题	近代物理研究所_近代物理研究所知识存储（2010之前）近代物理研究所_实验物理中心近代物理研究所_兰州重离子研究装置
通讯作者	Wang Jian-Guo
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Xi An Jiao Tong Univ, Dept Appl Phys, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Xian 710049, Peoples R China
推荐引用方式 GB/T 7714	Zhao Yong-Tao,Xu Zhong-Feng,Wang Jian-Guo,et al. Slow highly charged ions induced electron emission from clean Si surfaces[J]. ACTA PHYSICA SINICA,2010,59(11):7803-7807.
APA	Zhao Yong-Tao.,Xu Zhong-Feng.,Wang Jian-Guo.,Wang Yu-Yu.,Li De-Hui.,...&Xiao Guo-Qing.(2010).Slow highly charged ions induced electron emission from clean Si surfaces.ACTA PHYSICA SINICA,59(11),7803-7807.
MLA	Zhao Yong-Tao,et al."Slow highly charged ions induced electron emission from clean Si surfaces".ACTA PHYSICA SINICA 59.11(2010):7803-7807.