Effects of ion irradiation on the diffusion of pre-implanted B atoms in crystalline silicon

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	Effects of ion irradiation on the diffusion of pre-implanted B atoms in crystalline silicon
	Sealy, BJ ; Liu, CL ; Nejim, A ; Gwilliam, RM
刊名	HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
	2001-12-01
卷号	25 期号:1 页码:1238-1244
关键词	implantation transient enhanced diffusion secondary ion mass spectrometer crystalline silicon
ISSN号	0254-3052
英文摘要	N-type crystalline Si (100) implanted with 5keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO2 layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code.
WOS关键词	DEFECTS ; SI
WOS研究方向	Physics
语种	英语
出版者	SCIENCE CHINA PRESS
WOS记录号	WOS:000172849500017
公开日期	2010-10-29
内容类型	期刊论文
源URL	[http://ir.imp.cas.cn/handle/113462/1501]
专题	近代物理研究所_近代物理研究所知识存储（2010之前）
通讯作者	Liu, CL
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Univ Surrey, Sch Elect Engn Informat Technol & Math, Guildford GU2 7XH, Surrey, England
推荐引用方式 GB/T 7714	Sealy, BJ,Liu, CL,Nejim, A,et al. Effects of ion irradiation on the diffusion of pre-implanted B atoms in crystalline silicon[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2001,25(1):1238-1244.
APA	Sealy, BJ,Liu, CL,Nejim, A,&Gwilliam, RM.(2001).Effects of ion irradiation on the diffusion of pre-implanted B atoms in crystalline silicon.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,25(1),1238-1244.
MLA	Sealy, BJ,et al."Effects of ion irradiation on the diffusion of pre-implanted B atoms in crystalline silicon".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 25.1(2001):1238-1244.