Effects of high-energy electron irradiation on blue luminescence of unintentionally doped GaN heterostructure | |
Fu, X.1; Ma, T.1; Zhang, C.2; Zhang, L.2; Zhang, Z.2; Wang, X.3; Ma, H.3; Tu, H.1 | |
2012-09 | |
关键词 | GaN Electron irradiation Blue luminescence |
卷号 | 286 |
DOI | 10.1016/j.nimb.2012.01.054 |
页码 | 138-140 |
英文摘要 | The unintentionally doped epitaxial GaN was grown on (0001) sapphire by metal organic chemical vapor deposition (MOCVD). The effects of 2 MeV electron irradiation with the doses of 1 x 10(15)/cm(2) and 5 x 10(15)/cm(2) on the GaN epilayers were investigated by photoluminescence (PL) and Rutherford back-scattering spectroscopy (RBS). The blue luminescence (BL) from the GaN epitlayers decreases significantly after the dose of 1 x 10(15)/cm(2) electron irradiation. This is attributed to complex formation of BL-related defects with other point defects. On the contrary, the BL intensity from the GaN epilayers subjected to electron irradiation with the dose of 5 x 10(15)/cm(2) increases beyond the BL intensity from the low-dose irradiated one. It is deduced that the surplus gallium vacancies in 1 - charge state (V-Ga(1-)) could lead to the BL intensity rebounding as electron irradiation damage accumulated. (C) 2012 Elsevier B.V. All rights reserved. |
会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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会议录出版者 | ELSEVIER SCIENCE BV |
会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
语种 | 英语 |
WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
WOS记录号 | WOS:000309488300027 |
内容类型 | 会议论文 |
源URL | [http://119.78.100.186/handle/113462/57472] ![]() |
专题 | 中国科学院近代物理研究所 |
通讯作者 | Ma, T. |
作者单位 | 1.Gen Res Inst Nonferrous Met, Beijing 100088, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 3.Peiking Univ, Beijing 100087, Peoples R China |
推荐引用方式 GB/T 7714 | Fu, X.,Ma, T.,Zhang, C.,et al. Effects of high-energy electron irradiation on blue luminescence of unintentionally doped GaN heterostructure[C]. 见:. |
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