Effects of high-energy electron irradiation on blue luminescence of unintentionally doped GaN heterostructure

doi:10.1016/j.nimb.2012.01.054

	Effects of high-energy electron irradiation on blue luminescence of unintentionally doped GaN heterostructure
	Fu, X.1; Ma, T.1; Zhang, C.2; Zhang, L.2; Zhang, Z.2; Wang, X.3; Ma, H.3; Tu, H.1
	2012-09
关键词	GaN Electron irradiation Blue luminescence
卷号	286
DOI	10.1016/j.nimb.2012.01.054
页码	138-140
英文摘要	The unintentionally doped epitaxial GaN was grown on (0001) sapphire by metal organic chemical vapor deposition (MOCVD). The effects of 2 MeV electron irradiation with the doses of 1 x 10(15)/cm(2) and 5 x 10(15)/cm(2) on the GaN epilayers were investigated by photoluminescence (PL) and Rutherford back-scattering spectroscopy (RBS). The blue luminescence (BL) from the GaN epitlayers decreases significantly after the dose of 1 x 10(15)/cm(2) electron irradiation. This is attributed to complex formation of BL-related defects with other point defects. On the contrary, the BL intensity from the GaN epilayers subjected to electron irradiation with the dose of 5 x 10(15)/cm(2) increases beyond the BL intensity from the low-dose irradiated one. It is deduced that the surplus gallium vacancies in 1 - charge state (V-Ga(1-)) could lead to the BL intensity rebounding as electron irradiation damage accumulated. (C) 2012 Elsevier B.V. All rights reserved.
会议录	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者	ELSEVIER SCIENCE BV
会议录出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种	英语
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号	WOS:000309488300027
内容类型	会议论文
源URL	[http://119.78.100.186/handle/113462/57472]
专题	中国科学院近代物理研究所
通讯作者	Ma, T.
作者单位	1.Gen Res Inst Nonferrous Met, Beijing 100088, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 3.Peiking Univ, Beijing 100087, Peoples R China
推荐引用方式 GB/T 7714	Fu, X.,Ma, T.,Zhang, C.,et al. Effects of high-energy electron irradiation on blue luminescence of unintentionally doped GaN heterostructure[C]. 见:.