Effect of implantation temperature on exfoliation of H-2(+)-implanted Si

doi:10.1016/j.vacuum.2014.06.013

	Effect of implantation temperature on exfoliation of H-2(+)-implanted Si
	Li, B. S.; Wang, Z. G.; Du, Y. Y.; Wei, K. F.; Yao, C. F.; Cui, M. H.; Li, Y. F.; Zhu, H. P.
刊名	VACUUM
	2014-11-01
卷号	109 页码:1-7
关键词	Hydrogen Implantation Annealing Exfoliation Platelet Microcrack
ISSN号	0042-207X
DOI	10.1016/j.vacuum.2014.06.013
文献子类	Article
英文摘要	The effect of implantation temperature of crystalline silicon implanted with hydrogen on exfoliation was investigated. The samples were analyzed by Raman scattering spectroscopy, optical microscopy and transmission electron microscopy. Our experiment shows that the concentrations of implantation-induced defects and hydrogen decrease with the implantation temperature. Compared to the implantation at 573 K and 773 K, (100) platelets are preferentially nucleated when the sample was implanted at room temperature (RT), while {111} platelets are preferentially nucleated for the elevated temperature implantation. After annealing at 773 K, blisters and exfoliation occur for the sample implanted at RT but not the sample implanted at 573 K. Microstructure shows a microcrack in the damaged layer for the sample implanted at RT. After annealing at 973 K, blisters and exfoliation occur for the samples implanted at RT, 573 K and 773 K. The exfoliation mean size increases, but the exfoliation density decreases with the implantation temperature. Microstructure shows a microcrack in the damaged layer for the samples implanted at RT, 573 K and 773 K. The depth of the microcrack is related to the implantation temperature. The effects of implantation temperature on dislocation loops, platelet nucleation and growth were investigated. (C) 2014 Elsevier Ltd. All rights reserved.
资助项目	National Natural Science Foundation of China[11005130]
WOS关键词	SURFACE-LAYER EXFOLIATION ; SILICON ; TECHNOLOGY ; GROWTH
WOS研究方向	Materials Science ; Physics
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000342716000001
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/49831]
专题	中国科学院近代物理研究所
通讯作者	Li, B. S.
作者单位	Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Li, B. S.,Wang, Z. G.,Du, Y. Y.,et al. Effect of implantation temperature on exfoliation of H-2(+)-implanted Si[J]. VACUUM,2014,109:1-7.
APA	Li, B. S..,Wang, Z. G..,Du, Y. Y..,Wei, K. F..,Yao, C. F..,...&Zhu, H. P..(2014).Effect of implantation temperature on exfoliation of H-2(+)-implanted Si.VACUUM,109,1-7.
MLA	Li, B. S.,et al."Effect of implantation temperature on exfoliation of H-2(+)-implanted Si".VACUUM 109(2014):1-7.